Vertical field-effect transistor devices and methods of forming the same

ABSTRACT

Vertical field-effect transistor (VFET) devices and methods of forming the same are provided. The methods may include forming a lower structure on a substrate. The lower structure may include first and second VFETs, a preliminary isolation structure between the first and second VFETs, and a gate liner on opposing sides of the preliminary isolation structure and between the preliminary isolation structure and the substrate. Each of the first and second VFETs may include a bottom source/drain region, a channel region and a top source/drain region sequentially stacked, and a gate structure on a side surface of the channel region. The preliminary isolation structure may include a sacrificial layer and a gap capping layer sequentially stacked. The methods may also include forming a top capping layer on the lower structure and then forming a cavity between the first and second VFETs by removing the sacrificial layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to U.S. Provisional Application Ser.No. 62/970,278, entitled VERTICAL FET STRUCTURE WITH AIRGAP ISOLATION,filed in the USPTO on Feb. 5, 2020, the disclosure of which is herebyincorporated by reference herein in its entirety.

FIELD

The present disclosure generally relates to the field of electronicsand, more particularly, to vertical field-effect transistor (VFET)devices.

BACKGROUND

Various structures and manufacturing processes of VFET devices have beenresearched because of high scalability of VFET devices. Therefore,developing manufacturing processes that improve performance and/orreliability of VFET devices may be beneficial.

SUMMARY

According to some embodiments of the present inventive concept, methodsof forming an integrated circuit device may include forming a lowerstructure on a substrate. The lower structure may include a firstvertical field-effect transistor (VFET) and a second VFET on thesubstrate, a preliminary isolation structure between the first VFET andthe second VFET, and a gate liner on opposing sides of the preliminaryisolation structure and between the preliminary isolation structure andthe substrate. Each of the first VFET and the second VFET may include abottom source/drain region in the substrate, a channel region and a topsource/drain region that may be sequentially stacked on the substrate ina vertical direction, and a gate structure on a side surface of thechannel region. The preliminary isolation structure may include asacrificial layer and a gap capping layer sequentially stacked on thesubstrate in the vertical direction. The methods may also includeforming a top capping layer on the lower structure and then forming acavity between the first VFET and the second VFET by removing thesacrificial layer.

According to some embodiments of the present inventive concept, methodsof forming an integrated circuit device may include forming a firstpreliminary vertical field-effect transistor (VFET) and a secondpreliminary VFET on a substrate. The first and second preliminary VFETsmay be spaced apart from each other in a horizontal direction and maydefine a gate opening therebetween. Each of the first and secondpreliminary VFETs may include a bottom source/drain region in thesubstrate, a channel region and a mask layer that may be sequentiallystacked on the substrate in a vertical direction, and a preliminary gatestructure on a side surface of the channel region. The method may alsoinclude sequentially forming a preliminary gate liner and a preliminarysacrificial layer in the gate opening and on the first and secondpreliminary VFETs, forming a gate liner and a sacrificial layer in thegate opening by performing a planarization process, forming a recess inthe gate opening on the sacrificial layer by removing a portion of thesacrificial layer, forming a gap capping layer in the recess, formingtop source/drain openings on the channel regions of the first and secondpreliminary VFETs, respectively, by removing the mask layer and aportion of the preliminary gate structure of each of the first andsecond preliminary VFETs, forming top source/drain regions in the topsource/drain openings, respectively, forming a top capping layer on thetop source/drain regions, and then forming a cavity between the topsource/drain regions by removing the sacrificial layer.

According to some embodiments of the present inventive concept, methodsof forming an integrated circuit device may include forming apreliminary vertical field-effect transistor (VFET) on a substrate. Thepreliminary VFET may include a bottom source/drain region in thesubstrate, a channel region and a mask layer that may be sequentiallystacked on the substrate in a vertical direction, and a preliminary gatestructure on a side surface of the channel region. The method may alsoinclude sequentially forming a preliminary gate liner, a preliminarysacrificial layer, and a preliminary transistor isolation layer on thepreliminary VFET and performing a planarization process until the masklayer is exposed, thereby forming a gate liner, a sacrificial layer, anda transistor isolation layer. The sacrificial layer may include ahorizontal portion extending parallel to an upper surface of thesubstrate, and a vertical portion protruding from the horizontal portionand extending on a side surface of the preliminary VFET. The method mayfurther include forming a recess on the vertical portion of thesacrificial layer by removing a portion of the vertical portion of thesacrificial layer, forming a gap capping layer in the recess, forming atop source/drain opening on the channel region by removing the masklayer and a portion of the preliminary gate structure of the preliminaryVFET, forming a top source/drain region in the top source/drain opening,forming a top capping layer on the top source/drain region, forming anopening extending through the top capping layer and the transistorisolation layer and exposing the horizontal portion of the sacrificiallayer, forming a cavity by removing the sacrificial layer through theopening, and then forming an isolation plug in the opening.

According to some embodiments of the present inventive concept,integrated circuit devices may include a first vertical field-effecttransistor (VFET) and a second VFET on a substrate. Each of the firstVFET and the second VFET may include a bottom source/drain region in thesubstrate, a channel region and a top source/drain region that may besequentially stacked on the substrate in a vertical direction, and agate structure on a side surface of the channel region. The first VFETmay include a first side surface facing the second VFET, and the secondVFET may include a first side surface facing the first VFET. Theintegrated circuit devices may also include a gate liner continuouslyextending from the first side surface of the first VFET onto the firstside surface of the second VFET and a gap capping layer that is betweenthe first side surface of the first VFET and the first side surface ofthe second VFET and may include opposing side surfaces contacting thegate liner. The gate liner and the gap capping layer may enclose acavity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1, 2, and 3 are flowcharts illustrating methods of forming anintegrated circuit device including VFETs according to some embodimentsof the present inventive concept.

FIGS. 4 through 7, 9 through 20, and 22 are cross-sectional views, andFIGS. 8, 21, and 23 are plan views illustrating methods of forming anintegrated circuit device including VFETs according to some embodimentsof the present inventive concept.

FIGS. 24 and 28 are plan views, and FIGS. 25 through 27 and 29 arecross-sectional views illustrating methods of forming an integratedcircuit device including VFETs according to some embodiments of thepresent inventive concept.

FIGS. 30, 31, and 32 are plan views of an integrated circuit deviceincluding VFETs according to some embodiments of the present inventiveconcept.

FIG. 33 is a cross-sectional view of an integrated circuit deviceincluding VFETs according to some embodiments of the present inventiveconcept.

DETAILED DESCRIPTION

FIGS. 1, 2, and 3 are flowcharts illustrating methods of forming anintegrated circuit device including VFETs according to some embodimentsof the present inventive concept. Referring to FIG. 1, the methods mayinclude forming a preliminary VFET (e.g., a structure including a bottomsource/drain region 22, a channel region 12, a mask layer 14, and apreliminary gate structure 34 p in FIG. 9) (Block 100) and then forminga sacrificial layer (e.g., a sacrificial layer 44_1 and 44_2 in FIG. 10)(Block 200), forming a gap capping layer (e.g., a gap capping layer 48_1and 48_2 in FIG. 11) (Block 300), forming a top source/drain region(e.g., a top source/drain region 56 in FIG. 16) (Block 400), and forminga cavity (e.g., a cavity 64 in FIG. 19) (Block 500). Accordingly, thecavity may be formed after the top source/drain region is formed.

Referring to FIG. 2, the methods may further include forming a topsource/drain contact (e.g., a top source/drain contact 74 in FIG. 22)(Block 600) after the cavity is formed.

Referring to FIG. 3, the methods may further include forming a topsource/drain contact (e.g., a top source/drain contact 74 in FIG. 25)(Block 450) before the cavity is formed.

FIGS. 4 through 7, 9 through 20, and 22 are cross-sectional views, andFIGS. 8, 21, and 23 are plan views illustrating methods of forming anintegrated circuit device including VFETs according to some embodimentsof the present inventive concept.

Referring to FIG. 4, an active region 11 may be formed on a substrate 10by forming a trench 13 in the substrate 10. The active region 11 mayprotrude from an upper surface 10 u of the substrate 10 in a thirddirection D3. The third direction D3 may be perpendicular to the uppersurface 10 u of the substrate 10 and may be a vertical direction. Apreliminary channel structure may be formed on the active region 11. Thepreliminary channel structure may include a channel region 12 and a masklayer 14 sequentially stacked on the substrate 10 in the third directionD3. The channel region 12 may protrude from the active region 11 in thethird direction D3.

In some embodiments, forming the preliminary channel structure mayinclude forming the mask layer 14 on the substrate 10 and forming thechannel region 12 by etching the substrate 10 using the mask layer 14 asan etch mask. For example, the mask layer 14 may be a hard mask layerincluding SiN and/or SiON.

The substrate 10 may include one or more semiconductor materials, forexample, Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC and/or InP. In someembodiments, the substrate 10 may be a bulk substrate (e.g., a bulksilicon substrate) or a semiconductor on insulator (SOI) substrate.

In some embodiments, multiple preliminary channel structures may beformed on a single active region 11 and may be spaced apart from eachother in a first direction Dl. The first direction D1 may be parallel tothe upper surface 10 u of the substrate 10 and may be a first horizontaldirection. Although FIG. 4 shows that four preliminary channelstructures are formed on a single active region 11, the presentinventive concept is not limited thereto.

A bottom source/drain region 22 and a bottom spacer pattern 24 may beformed on the active region 11. The bottom source/drain region 22 andthe bottom spacer pattern 24 may be on a side surface of the channelregion 12.

The bottom source/drain region 22 may be formed on the substrate 10before or after forming the channel region 12. In some embodiments, thebottom source/drain region 22 may be formed by implanting impurityelements (e.g., B, P, and/or As) into the substrate 10. In someembodiments, the bottom source/drain region 22 may be formed by formingan epitaxial layer including impurity elements (e.g., B, P, and/or As)on the substrate 10. The epitaxial layer of the bottom source/drainregion 22 may be formed by performing an epitaxial growth process usingthe substrate 10 as a seed layer.

The bottom spacer pattern 24 may be formed on the bottom source/drainregion 22 to electrically isolate the bottom source/drain region 22 fromelements subsequently formed on the bottom source/drain region 22 (e.g.,a gate electrode 33 in FIG. 13). The bottom spacer pattern 24 mayinclude an insulating material (e.g., silicon oxide, silicon nitride orsilicon oxynitride).

An active liner 26 may be formed on the preliminary channel structuresand in the trench 13. In some embodiments, the active liner 26 may havea uniform thickness as illustrated in FIG. 4 and may be formed by, forexample, an atomic layer deposition (ALD) process. For example, theactive liner 26 may include an insulating material (e.g., a siliconlayer including nitrogen and/or oxygen).

Referring to FIG. 5, a field isolation layer 28 may be formed in thetrench 13 and a gate insulating layer 30 and a gate electrode layer 32may be sequentially formed after the field isolation layer 28 is formed.The field isolation layer 28 may include an insulating material (e.g., asilicon layer including oxygen). The field isolation layer 28 mayinclude multiple layers sequentially stacked. The active liner 26 mayextend between the substrate 10 and the field isolation layer 28.

In some embodiments, portions of the active liner 26 formed on thechannel region 12 and the mask layer 14 may be removed before formingthe gate insulating layer 30, and the gate insulating layer 30 maycontact the channel region 12 and the mask layer 14 as illustrated inFIG. 5. In some embodiments, each of the gate insulating layer 30 andthe gate electrode layer 32 may have a uniform thickness as illustratedin FIG. 5 and may be formed by, for example, an ALD process. The gateinsulating layer 30 may include silicon oxide and/or a high-k material(e.g., hafnium oxide or aluminum oxide). The gate electrode layer 32 mayinclude, for example, a metallic layer (e.g., W, Ti, Cu, and/or Co). Insome embodiments, the gate electrode layer 32 may be multiple stackedlayers including a work function layer (e.g., TiN, TiAlN, TaA1N, TiAl,TaC, TiC, and/or HfSi) and/or a metallic layer.

Referring to FIG. 6, an etching process may be performed on the gateelectrode layer 32 and the gate insulating layer 30 until the fieldisolation layer 28 is exposed to form a preliminary gate structure 34 pon a side surface of the preliminary channel structure. The etchingprocess may also expose the mask layer 14 and the bottom spacer pattern24 as illustrated in FIG. 6. The preliminary gate structure 34 p mayinclude a preliminary gate insulator 31 p and a preliminary gateelectrode 33 p. Two adjacent preliminary gate structures 34 p spacedapart from each other in the first direction D1 may define a gateopening 35 between the two adjacent preliminary gate structures 34 p.The etching process may include a wet etching process and/or a dryetching process.

Referring to FIG. 7, a preliminary gate liner 42 p, a preliminarysacrificial layer 44 p, and a transistor isolation layer 46 may besequentially formed on the preliminary gate structure 34 p. Thepreliminary gate liner 42 p and the preliminary sacrificial layer 44 pmay fill the gate openings 35, and the transistor isolation layer 46 maynot be formed in the gate openings 35. In some embodiments, each of thepreliminary gate liner 42 p and the preliminary sacrificial layer 44 pmay have a uniform thickness as illustrated in FIG. 7 and may be formedby, for example, an ALD process.

For example, the preliminary gate liner 42 p may include an insulatingmaterial including nitride (e.g., a silicon layer including nitrogenand/or oxygen), and the transistor isolation layer 46 may include aninsulating material (e.g., a silicon layer including oxygen). Thepreliminary

Attorney Docket No. 1500.18 sacrificial layer 44 p may include amaterial that has an etch selectivity with respect to both thepreliminary gate liner 42 p and the transistor isolation layer 46. Forexample, the preliminary sacrificial layer 44 p may be a silicon layer(e.g., an amorphous silicon layer) or a metallic layer (e.g., W, Ti, Cu,and/or Co).

FIG. 9 is a cross-sectional view taken along the line A-A′ of FIG. 8.FIG. 8 shows some of the elements shown in FIG. 9, rather than allelements, to simplify the drawing. Referring to FIGS. 8 and 9, upperportions of the transistor isolation layer 46, the preliminarysacrificial layer 44 p, and the preliminary gate liner 42 p may beremoved until the mask layer 14 is exposed to form a sacrificial layer44 and a gate liner 42 on the preliminary gate structures 34 p.

The upper portions of the transistor isolation layer 46, the preliminarysacrificial layer 44 p, and the preliminary gate liner 42 p may beremoved by performing, for example, a planarization process. Theplanarization process may include a chemical mechanical polishing (CMP)process, a dry etching process and/or a wet etching process. In someembodiments, upper portions of the preliminary gate insulator 31 p andthe preliminary gate electrode 33 p may also be removed.

Referring to FIG. 8, each of the gate liner 42 and the sacrificial layer44 may enclose the mask layer 14. Further, each of the preliminary gateinsulator 31 p and the preliminary gate electrode 33 p may enclose themask layer 14. The channel region 12 may have a shape the same as orsimilar to the mask layer 14 in the plan view. The mask layer 14 mayextend longitudinally in a second direction D2. The second direction D2may be parallel to the upper surface 10 u of the substrate 10 and may bea second horizontal direction. The second direction D2 may beperpendicular to the first direction D1.

According to FIGS. 8 and 9, the sacrificial layer 44 may include a firstportion 44_1 in the gate opening (e.g., the gate opening 35 in FIG. 6)and a second portion 44_2 on the field isolation layer 28. The secondportion 44_2 of the sacrificial layer 44 may include a horizontalportion 44_2h extending in the first direction D1 and a vertical portion44_2v protruding from the horizontal portion 44_2h of the second portion44_2 of the sacrificial layer 44 in the third direction D3. In someembodiments, the vertical portion 44_2v of the second portion 44_2 ofthe sacrificial layer 44 may have a thickness in the first direction D1equal to a thickness of the horizontal portion 44_2h of the secondportion 44_2 of the sacrificial layer 44 in the third direction D3.

The transistor isolation layer 46 may be formed on the horizontalportion 44_2h of the second portion 44_2 of the sacrificial layer 44 andmay expose the vertical portion 44_2v of the second portion 44_2 of thesacrificial layer 44 (e.g., an uppermost surface of the vertical portion44_2v of the second portion 44_2 of the sacrificial layer 44).

Referring to FIG. 10, an upper portion of the sacrificial layer 44 maybe removed to form recess 47. Specifically, an upper portion of thefirst portion 44_1 of the sacrificial layer 44 may be removed to form afirst recess 47_1 on the first portion 44_1 of the sacrificial layer 44.The first recess 47_1 may be defined by the gate liner 42 and the firstportion 44_1 of the sacrificial layer 44. Further, an upper portion ofthe vertical portion 44_2v of the second portion 44_2 of the sacrificiallayer 44 may be removed to form a second recess 47_2 on the verticalportion 44_2v of the second portion 44_2 of the sacrificial layer 44.The second recess 47_2 may be defined by the gate liner 42, the verticalportion 44_2v of the second portion 44_2 of the sacrificial layer 44,and the transistor isolation layer 46.

The upper portion of the sacrificial layer 44 may be removed by, forexample, a wet etching process and/or a dry etching process. The gateliner 42 and the transistor isolation layer 46 may not be removed whileremoving the upper portion of the sacrificial layer 44 as illustrated inFIG. 10. In some embodiments, an upper surface of the first portion 44_1of the sacrificial layer 44 exposed by the first recess 47_1 and anupper surface of the vertical portion 44_2v of the second portion 44_2of the sacrificial layer 44 exposed by the second recess 47_2 may beflat.

Referring to FIG. 11, a gap capping layer 48 may be formed in the recess47. A first gap capping layer 48_1 may be formed in the first recess47_1, and a second gap capping layer 48_2 may be formed in the secondrecess 47_2. In some embodiments, the first and second gap cappinglayers 48_1 and 48_2 may fill the first recess 47_1 and the secondrecess 47_2, respectively. The first and second gap capping layers 48_1and 48_2 may include an insulating material (e.g., a silicon layerincluding oxygen) and may include a material that has an etchselectivity with respect to the sacrificial layer 44.

Referring to FIG. 12, the mask layer 14 may be removed and a preliminarytop source/drain opening 51 may be formed on the channel region 12. Themask layer 14 may be removed by, for example, a wet etching processand/or a dry etching process.

Referring to FIG. 13, an upper portion of the preliminary gate structure34 p that includes the preliminary gate insulator 31 p and thepreliminary gate electrode 33 p may be removed to form a gate structure34 on a side surface of the channel region 12. An enlarged preliminarysource/drain opening 51e may be formed on the channel region 12. In someembodiments, the enlarged preliminary source/drain opening 51e mayexpose the gate liner 42 (e.g., an upper portion of the gate liner 42)and the channel region 12 (e.g., an upper portion of the channel region12). In some embodiments, an upper portion of the channel region 12 mayprotrude from the gate structure 34 as illustrated in FIG. 13. The upperportion of the preliminary gate structure 34 p may be removed by, forexample, a wet etching process and/or a dry etching process.

The first portion 44_1 of the sacrificial layer 44 and the first gapcapping layer 48_1 between two adjacent gate structures 34 may be apreliminary isolation structure. The gate liner 42 may be on opposingsides of the preliminary isolation structure. In some embodiments, thegate liner 42 may contact opposing sides of the first portion 44_1 ofthe sacrificial layer 44 and opposing sides of the first gap cappinglayer 48_1 as illustrated in FIG. 13. The gate liner 42 may also extendbetween the first portion 44_1 of the sacrificial layer 44 and thesubstrate 10. In some embodiments, the gate liner 42 may contact a lowersurface of the first portion 44_1 of the sacrificial layer 44 asillustrated in FIG. 13.

Referring to FIG. 14, a top spacer layer 53 may be formed. In someembodiments, the top spacer layer 53 may have a uniform thickness andmay be formed by, for example, an ALD process. The top spacer layer 53may include the same material as the bottom spacer pattern 24. Forexample, the top spacer layer 53 may include an insulating material(e.g., silicon oxide, silicon nitride or silicon oxynitride).

Referring to FIG. 15, a top spacer pattern 54 may be formed on the gatestructure 34 by etching the top spacer layer 53, and a top source/drainopening 52 may be formed on the top spacer pattern 54. For example,etching the top spacer layer 53 may be performed by a wet etchingprocess and/or a dry etching process. The top source/drain opening 52may expose the channel region 12 (e.g., an uppermost surface of thechannel region 12). The top spacer pattern 54 may be formed toelectrically isolate the gate structure 34 from elements subsequentlyformed on the gate structure 34 (e.g., a top source/drain region 56 inFIG. 16).

Referring to FIG. 16, a top source/drain region 56 may be formed in thetop source/drain opening 52. The top source/drain region 56 may beformed by performing an epitaxial growth process using the channelregion 12 as a seed layer. The top source/drain region 56 may be anepitaxial layer including impurity elements (e.g., B, P, and/or As). Insome embodiments, the top source/drain region 56 may fill a lowerportion of the top source/drain opening 52 and may contact the gateliner 42 as illustrated in FIG. 16. The bottom source/drain region 22formed in the substrate 10, the channel region 12 and the topsource/drain region 56 sequentially stacked on the substrate 10 in thethird direction D3, and the gate structure 34 on a side surface of thechannel region 12 may form a VFET. In some embodiments, an upper portionof the top source/drain opening 52 may not be filled with the topsource/drain region 56 as illustrated in FIG. 16.

Referring to FIG. 17, a top capping layer 58 may be formed on the topsource/drain region 56. The top capping layer 58 may be formed in thetop source/drain opening 52 and may extend on the transistor isolationlayer 46. The top capping layer 58 may include, for example, aninsulating material (e.g., a silicon layer including nitrogen and/oroxygen).

Referring to FIG. 18, an opening 62 may be formed through the topcapping layer 58 and the transistor isolation layer 46. The opening 62may expose the horizontal portion 44_2h of the second portion 44_2 ofthe sacrificial layer 44 (e.g., an upper surface of the horizontalportion 44_2h of the second portion 44_2 of the sacrificial layer 44).

Referring to FIG. 19, the first portion 44_1 and the second portion 44_2of the sacrificial layer 44 may be removed through the opening 62 toform a first cavity 64_1 and a second cavity 64_2, respectively. Forexample, the first portion 44_1 and the second portion 44_2 of thesacrificial layer 44 may be removed by performing a wet etching process.The wet etching process may use an etchant including, for example,ammonia. As illustrated in FIG. 19, the sacrificial layer 44 may beremoved selectively, and the gate liner 42, the transistor isolationlayer 46, and the gap capping layer 48 may not be removed. In someembodiments, the first portion 44_1 and the second portion 44_2 of thesacrificial layer 44 may be entirely removed and may not remain on thegate liner 42, the transistor isolation layer 46, and the gap cappinglayer 48. Accordingly, the lower surface of the gap capping layer 48 maybe exposed to the cavity 64. In some embodiments, an entirety of thelower surface of the gap capping layer 48 may be exposed to the cavity64. In some embodiments, the lower surface of the gap capping layer 48may be flat as illustrated in FIG. 19.

The top source/drain region 56 may include a lower surface that facesthe substrate 10 and may be closer to the substrate 10 than the lowersurface of the gap capping layer 48. Accordingly, a portion of the firstcavity 64_1 may be between two adjacent top source/drain regions 56 asillustrated in FIG. 19. The cavity 64 may not include liquid or solidtherein. The cavity 64 may be, for example, a gap filled with air (e.g.,an air-gap), a gap filled with an inert gas or gases (e.g., an inert gasgap), a gap defining a vacuum (e.g., a vacuum gap), etc. The cavity 64may reduce a parasitic capacitance between neighboring conductiveelements (e.g., gate structures 34).

FIG. 20 is a cross-sectional view taken along the line C-C′ of FIG. 21,and FIG. 21 is a plan view taken along the line B-B′ of FIG. 20. FIG. 21shows some of the elements shown in FIG. 20, rather than all elements,to simply the drawing. Referring to FIG. 20, an isolation plug 66 may beformed in the opening 62. The isolation plug 66 may include aninsulating material (e.g., a silicon layer including nitrogen and/oroxygen). The isolation plug 66 may be formed by a deposition processthat has a poor step coverage and may not be formed in the first cavity64_1 and the second cavity 64_2.

The first cavity 64_1 may be enclosed by the gate liner 42 and the firstgap capping layer 48_1, and the second cavity 64_2 may be enclosed bythe gate liner 42, the second gap capping layer 48_2, and the transistorisolation layer 46. A lower portion of the isolation plug 66 may be inthe second cavity 64_2. In some embodiments, the isolation plug 66 mayoverlap the field isolation layer 28 as illustrated in FIG. 20 but thepresent inventive concept is not limited thereto. For example, in someembodiments, the isolation plug 66 may be formed to overlap the activeregion 11.

Referring to FIG. 21, the first cavity 64_1 and the second cavity 64_2may be connected to each other, and the top source/drain region 56 maybe enclosed by the first cavity 64_1 and the second cavity 64_2 in aplan view.

FIG. 22 is a cross-sectional view taken along the line D-D′ of FIG. 23.Referring to FIG. 22, a contact isolation layer 72 and a topsource/drain contact 74 may be formed after the cavity 64 is formed. Thecontact isolation layer 72 may be formed after the cavity 64 is formedand then a portion of the contact isolation layer 72 may be removed toform a contact hole that extends through the contact isolation layer 72and the top capping layer 58 and exposes the top source/drain region 56(e.g., an upper surface of the top source/drain region 56). The topsource/drain contact 74 may be formed in the contact hole and maycontact the top source/drain region 56. In some embodiments, the topsource/drain contact 74 may contact multiple top source/drain regions 56as illustrated in FIG. 22.

For example, the contact isolation layer 72 may include an insulatingmaterial (e.g., a silicon layer including oxygen), and the topsource/drain contact 74 may include metal (e.g., Al, W, and/or Cu). Insome embodiments, the top source/drain contact 74 may include a metalnitride layer and a metal layer sequentially stacked. Although FIG. 22shows a single contact (i.e., the top source/drain contact 74), multiplecontacts may be formed in the contact isolation layer 72. For example, agate contact (e.g., a gate contact 76 in FIGS. 32 and 33) contacting thegate electrode 33 and/or a bottom source/drain contact (e.g., a bottomsource/drain contact 78 in FIGS. 32 and 33) contacting the bottomsource/drain region 22 may be formed in the contact isolation layer 72.

FIGS. 24 and 28 are plan views, and FIGS. 25 through 27 and 29 arecross-sectional views illustrating methods of forming an integratedcircuit device including VFETs according to some embodiments of thepresent inventive concept.

FIG. 24 shows some of the elements shown in FIG. 25, rather than allelements, to simply the drawing. FIG. 25 is a cross-sectional view takenalong the line E-E′ of FIG. 24. FIG. 28 also shows some of the elementsshown in FIG. 29, rather than all elements, to simply the drawing. FIGS.26, 27, and 29 are cross-sectional views taken along the line F-F′ ofFIG. 28.

Referring to FIGS. 24 and 25, a contact isolation layer 72 may be formedon the top capping layer 58 after processes that are the same or similarto those described in FIGS. 4 through 17 are performed and then a topsource/drain contact 74 may be formed in the contact isolation layer 72.The top source/drain contact 74 may extend through the contact isolationlayer 72 and the top capping layer 58 and may contact the topsource/drain region 56.

Referring to FIG. 26, an opening 62 that extends through the contactisolation layer 72, the top capping layer 58, and the transistorisolation layer 46 and exposes the second portion 44_2 of thesacrificial layer 44 (e.g., an upper surface of the second portion 44_2of the sacrificial layer 44) may be formed. Referring to FIG. 27, thefirst portion 44_1 and the second portion 44_2 of the sacrificial layer44 may be removed through the opening 62 to form a first cavity 64_1 anda second cavity 64_2, respectively.

Referring to FIG. 29, an isolation plug 66 may be formed in the opening62. Although FIGS. 28 and 29 show that the isolation plug 66 is betweenthe active regions 11 and overlaps the field isolation layer 28, thepresent inventive concept is not limited thereto. In some embodiments,the isolation plug 66 may be formed to overlap the active region 11.

As the first cavity 64_1 and the second cavity 64_2 are formed afterforming the top source/drain contact 74, a conductive material of thetop source/drain contact 74 may not be formed in the first cavity 64_1and the second cavity 64_2 and thus issues associated with theconductive material of the top source/drain contact 74 in the firstcavity 64_1 and the second cavity 64_2 may be reduced.

FIGS. 30, 31, and 32 are plan views of an integrated circuit deviceincluding VFETs according to some embodiments of the present inventiveconcept. FIGS. 30, 31, and 32 are similar to the plan view of FIG. 28and show some of the elements shown in FIG. 29, rather than allelements, to simply the drawing. FIG. 33 is a cross-sectional view takenalong the line G-G′ of FIG. 32 according to some embodiments of thepresent inventive concept.

Referring to FIG. 30, the isolation plug 66 may have a line shapeextending longitudinally in the second direction D2. In someembodiments, the isolation plug 66 may have a length in the seconddirection D2, which is longer than a length of the top source/drainregion 56 in the second direction D2 as illustrated in FIG. 30.

Referring to FIG. 31, multiple isolation plugs 66 may be formed outsideof the active regions 11. In some embodiments, two isolation plugs 66may be formed, and the isolation plug 66 may be spaced apart from theactive regions 11 in the second direction D2 as illustrated in FIG. 31.

Referring to FIG. 32, multiple isolation plugs 66 may be formed on theactive regions 11. In some embodiments, two isolation plugs 66 may beformed, and each of the isolation plugs 66 may be formed on a singleactive region 11 as illustrated in FIG. 32. In some embodiments, the topsource/drain contact 74 may contact three top source/drain regions 56 asillustrated in FIG. 32 but the present inventive concept is not limitedthereto. For example, the top source/drain contact 74 may contact allfour top source/drain regions 56 on a single active region 11.

Referring to FIGS. 32 and 33, a gate contact 76 contacting the gateelectrode 33 may be formed. The gate contact 76 may extend through thecontact isolation layer 72, the top capping layer 58, the transistorisolation layer 46, and the gate liner 42. In some embodiments, the gatecontact 76 may have a line shape extending longitudinally in the firstdirection D1 as illustrated in FIG. 32 but the present inventive conceptis not limited thereto.

Referring to FIGS. 32 and 33, a bottom source/drain contact 78contacting the bottom source/drain region 22 may be formed. The bottomsource/drain contact 78 may extend through the contact isolation layer72, the top capping layer 58, the transistor isolation layer 46, thegate liner 42, and bottom spacer pattern 24. In some embodiments, thebottom source/drain contact 78 may have a line shape extendinglongitudinally in the first direction D1 as illustrated in FIG. 32 butthe present inventive concept is not limited thereto.

In some embodiments, each of the top source/drain contact 74, the gatecontact 76, and the bottom source/drain contact 78 may include multiplelayers sequentially stacked as illustrated in FIG. 33. For example, eachof the top source/drain contact 74, the gate contact 76, and the bottomsource/drain contact 78 may include a metal nitride layer and a metallayer. However, the present inventive concept is not limited thereto.For example, each of the top source/drain contact 74, the gate contact76, and the bottom source/drain contact 78 may include a single layer.In some embodiments, the top source/drain contact 74, the gate contact76, and the bottom source/drain contact 78 may be formed using the samedeposition process. In some embodiments, upper surfaces of the topsource/drain contact 74, the gate contact 76, and the bottomsource/drain contact 78 may be coplanar with each other as illustratedin FIG. 33.

Example embodiments of the present inventive concept are describedherein with reference to cross-sectional views or plan views that areschematic illustrations of idealized embodiments and intermediatestructures of example embodiments. As such, variations from the shapesof the illustrations as a result, for example, of manufacturingtechniques and/or tolerances, are to be expected. Thus, exampleembodiments of the present inventive concept should not be construed aslimited to the particular shapes illustrated herein but includedeviations in shapes that result, for example, from manufacturing. Likereference numbers refer to like elements throughout.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which the present inventive conceptbelongs. It will be further understood that terms, such as those definedin commonly used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the presentinventive concept. As used herein, the singular forms “a,” “an” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises,” “comprising,” “includes” and/or “including,” whenused in this specification, specify the presence of the stated features,steps, operations, elements and/or components, but do not preclude thepresence or addition of one or more other features, steps, operations,elements, components and/or groups thereof. As used herein the term“and/or” includes any and all combinations of one or more of theassociated listed items.

It will be understood that although the terms first, second, etc. may beused herein to describe various elements, these elements should not belimited by these terms. These terms are only used to distinguish oneelement from another. Thus, a first element could be termed a secondelement without departing from the teachings of the present inventiveconcept.

It should also be noted that in some alternate implementations, thefunctions/acts noted in flowchart blocks herein may occur out of theorder noted in the flowcharts. For example, two blocks shown insuccession may in fact be executed substantially concurrently or theblocks may sometimes be executed in the reverse order, depending uponthe functionality/acts involved. Moreover, the functionality of a givenblock of the flowcharts and/or block diagrams may be separated intomultiple blocks and/or the functionality of two or more blocks of theflowcharts and/or block diagrams may be at least partially integrated.Finally, other blocks may be added/inserted between the blocks that areillustrated, and/or blocks/operations may be omitted without departingfrom the scope of the present inventive concept.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe scope of the inventive concept. Thus, to the maximum extent allowedby law, the scope is to be determined by the broadest permissibleinterpretation of the following claims and their equivalents, and shallnot be restricted or limited by the foregoing detailed description

1. A method of forming an integrated circuit device, the method comprising: forming a lower structure on a substrate, the lower structure comprising: a first vertical field-effect transistor (VFET) and a second VFET on the substrate, wherein each of the first VFET and the second VFET comprises a bottom source/drain region in the substrate, a channel region and a top source/drain region that are sequentially stacked on the substrate in a vertical direction, and a gate structure on a side surface of the channel region; a preliminary isolation structure between the first VFET and the second VFET, wherein the preliminary isolation structure comprises a sacrificial layer and a gap capping layer sequentially stacked on the substrate in the vertical direction; and a gate liner on opposing sides of the preliminary isolation structure and between the preliminary isolation structure and the substrate; forming a top capping layer on the lower structure; and then forming a cavity between the first VFET and the second VFET by removing the sacrificial layer.
 2. The method of claim 1, wherein the sacrificial layer comprises a first portion formed between the first VFET and the second VFET and a second portion different from the first portion, wherein the method further comprising forming an opening extending through the top capping layer and exposing the second portion of the sacrificial layer, and wherein forming the cavity comprising removing the first portion and the second portion of the sacrificial layer through the opening.
 3. The method of claim 2, further comprising: forming a contact isolation layer on the top capping layer; and forming a top source/drain contact in the contact isolation layer, the top source/drain contact contacting the top source/drain region of the first VFET, wherein forming the opening is performed after forming the top source/drain contact, and the opening extends through the contact isolation layer and the top capping layer.
 4. The method of claim 1, wherein forming the lower structure comprises: forming first and second preliminary channel structures on the substrate, wherein each of the first and second preliminary channel structures comprises the channel region and a mask layer sequentially stacked on the substrate in the vertical direction; forming a first preliminary gate structure on a side surface of the first preliminary channel structure and a second preliminary gate structure on a side surface of the second preliminary channel structure; forming the gate liner and the sacrificial layer between the first and second preliminary gate structures; forming a recess between the first and second preliminary gate structures on the sacrificial layer by removing a portion of the sacrificial layer; and forming the gap capping layer in the recess.
 5. The method of claim 4, wherein forming the lower structure further comprises: after forming the gap capping layer, forming the gate structure of the first VFET and the second VFET by removing the mask layers of the first and second preliminary channel structures and portions of the first and second preliminary gate structures; and then forming the top source/drain regions on the gate structures of the first VFET and the second VFET.
 6. The method of claim 4, wherein the side surface of the first preliminary channel structure is a first side surface facing the second preliminary channel structure, and the first preliminary channel structure further comprises a second side surface opposite to the first side surface, wherein forming the gate liner and the sacrificial layer comprises forming a first portion of the gate liner and a first portion of the sacrificial layer between the first and second preliminary gate structures and forming a second portion of the gate liner and a second portion of the sacrificial layer on the second side surface of the first preliminary channel structure, and the second portion of the sacrificial layer comprises a horizontal portion extending on the substrate and a vertical portion protruding from the horizontal portion and extending on the second side surface of the first preliminary channel structure, wherein the method further comprises, before forming the recess, forming a transistor isolation layer on the second portion of the sacrificial layer, wherein forming the recess comprising forming a first recess on the first portion of the sacrificial layer by removing a portion of the first portion of the sacrificial layer and forming a second recess on the vertical portion of the second portion of the sacrificial layer by removing a portion of the vertical portion of the second portion of the sacrificial layer, wherein forming the gap capping layer comprises forming a first gap capping layer in the first recess and forming a second gap capping layer in the second recess, and wherein forming the cavity comprises forming a first cavity between the first VFET and the second VFET by removing the first portion of the sacrificial layer and forming a second cavity by removing the second portion of the sacrificial layer.
 7. The method of claim 6, wherein removing the first portion and the second portion of the sacrificial layer comprises removing entireties of the first portion and the second portion of the sacrificial layer.
 8. The method of claim 6, wherein the vertical portion of the second portion of the sacrificial layer has a first thickness in a horizontal direction, and the horizontal portion of the second portion of the sacrificial layer has a second thickness in the vertical direction, and wherein the first thickness is equal to the second thickness.
 9. The method of claim 1, wherein the sacrificial layer is a silicon layer, and forming the cavity comprises a performing a wet etching process using an etchant comprising ammonia.
 10. (canceled)
 11. (canceled)
 12. The method of claim 1, wherein the gap capping layer comprises a lower surface facing the substrate, and the lower surface of the gap capping layer is exposed to the cavity.
 13. (canceled)
 14. (canceled)
 15. The method of claim 1, wherein a portion of the cavity is between the top source/drain regions of the first VFET and the second VFET.
 16. A method of forming an integrated circuit device, the method comprising: forming a first preliminary vertical field-effect transistor (VFET) and a second preliminary VFET on a substrate, wherein the first and second preliminary VFETs are spaced apart from each other in a horizontal direction and define a gate opening therebetween, wherein each of the first and second preliminary VFETs comprises a bottom source/drain region in the substrate, a channel region and a mask layer that are sequentially stacked on the substrate in a vertical direction, and a preliminary gate structure on a side surface of the channel region; sequentially forming a preliminary gate liner and a preliminary sacrificial layer in the gate opening and on the first and second preliminary VFETs; forming a gate liner and a sacrificial layer in the gate opening by performing a planarization process; forming a recess in the gate opening on the sacrificial layer by removing a portion of the sacrificial layer; forming a gap capping layer in the recess; forming top source/drain openings on the channel regions of the first and second preliminary VFETs, respectively, by removing the mask layer and a portion of the preliminary gate structure of each of the first and second preliminary VFETs; forming top source/drain regions in the top source/drain openings, respectively; forming a top capping layer on the top source/drain regions; and then forming a cavity between the top source/drain regions by removing the sacrificial layer.
 17. The method of claim 16, wherein the sacrificial layer is a silicon layer, and removing the sacrificial layer comprises performing a wet etching process using an etchant comprising ammonia.
 18. The method of claim 16, wherein removing the sacrificial layer comprises removing an entirety of the sacrificial layer.
 19. The method of claim 16, wherein the gap capping layer comprises a lower surface that faces the substrate and is exposed to the cavity, and each of the top source/drain regions comprises a lower surface facing the substrate, and wherein the lower surfaces of the top source/drain regions are closer to the substrate than the lower surface of the gap capping layer.
 20. The method of claim 16, further comprising: before forming the cavity, forming a contact isolation layer on the top capping layer; forming a top source/drain contact in the contact isolation layer, the top source/drain contact contacts one of the top source/drain regions; after forming the top source/drain contact, forming an opening that extends through the contact isolation layer and the top capping layer and exposes the sacrificial layer; and forming the cavity comprises removing the sacrificial layer through the opening.
 21. A method of forming an integrated circuit device, the method comprising: forming a preliminary vertical field-effect transistor (VFET) on a substrate, wherein the preliminary VFET comprises a bottom source/drain region in the substrate, a channel region and a mask layer that are sequentially stacked on the substrate in a vertical direction, and a preliminary gate structure on a side surface of the channel region; sequentially forming a preliminary gate liner, a preliminary sacrificial layer, and a preliminary transistor isolation layer on the preliminary VFET; performing a planarization process until the mask layer is exposed, thereby forming a gate liner, a sacrificial layer, and a transistor isolation layer, wherein the sacrificial layer comprises a horizontal portion extending parallel to an upper surface of the substrate, and a vertical portion protruding from the horizontal portion and extending on a side surface of the preliminary VFET; forming a recess on the vertical portion of the sacrificial layer by removing a portion of the vertical portion of the sacrificial layer; forming a gap capping layer in the recess; forming a top source/drain opening on the channel region by removing the mask layer and a portion of the preliminary gate structure of the preliminary VFET; forming a top source/drain region in the top source/drain opening; forming a top capping layer on the top source/drain region; forming an opening extending through the top capping layer and the transistor isolation layer and exposing the horizontal portion of the sacrificial layer; forming a cavity by removing the sacrificial layer through the opening; and then forming an isolation plug in the opening.
 22. The method of claim 21, wherein the sacrificial layer is a silicon layer, and removing the sacrificial layer comprises performing a wet etching process using an etchant comprising ammonia.
 23. The method of claim 22, wherein removing the sacrificial layer comprises removing an entirety of the sacrificial layer.
 24. The method of claim 21, wherein the vertical portion of the sacrificial layer has a first thickness in a horizontal direction, and the horizontal portion of the sacrificial layer has a second thickness in the vertical direction, and wherein the first thickness is equal to the second thickness. 25-33. (canceled) 